The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/25/i=39/a=395801/pdf
Reference38 articles.
1. Growth and self-organization of SiGe nanostructures
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4. Overview no. 41 The interactions of composition and stress in crystalline solids
5. Thermodynamics of a stressed alloy with a free surface:Coupling between the morphological and compositional instabilities
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dynamical evolution of Ge quantum dots on Si(111): From island formation to high temperature decay;Aggregate;2022-04-22
2. Formation of extended thermal etch pits on annealed Ge wafers;Applied Surface Science;2018-12
3. Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth;Journal of Physics: Condensed Matter;2015-05-28
4. Strain-induced Ge segregation on Si at high temperatures;Journal of Crystal Growth;2015-03
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