Theoretical investigation of the equilibrium surface structure of Si1−x−yGexCy alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference21 articles.
1. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
2. Optical band gap of the ternary semiconductor Si1−x−yGexCy
3. Theoretical investigation of random Si-C alloys
4. Photoluminescence of Tensile Strained, Exactly Strain Compensated, and Compressively StrainedSi1−x−yGexCyLayers on Si
5. Monte Carlo Studies of Ternary Semiconductor Alloys: Application to theSi1−x−yGexCySystem
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1. Quantitative investigation of the influence of carbon surfactant on Ge surface diffusion and island nucleation on Si(100);Physical Review B;2010-09-30
2. Formation of SiGe Heterostructures and Their Properties;Springer Handbook of Crystal Growth;2010
3. The role of carbon impurities on the Si(0 0 1)-c(4 × 4) surface reconstruction: Theoretical calculations;Surface Science;2009-05
4. Leakage currents and dielectric breakdown of Si1−x−yGexCy thermal oxides;Microelectronics Reliability;2008-10
5. Probing the Structure and Energetics of Dislocation Cores in SiGe Alloys through Monte Carlo Simulations;Physical Review Letters;2006-12-20
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