The role of carbon impurities on the Si(0 0 1)-c(4 × 4) surface reconstruction: Theoretical calculations
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference40 articles.
1. General trends of the carbon penetration in Si(001) surfaces: influences of relevant parameters
2. Is the c(4×4) reconstruction of Si(001) associated with the presence of carbon?
3. STM study of the C-inducedSi(100)−c(4×4)reconstruction
4. Modeling of the carbon-rich c(4×4) reconstruction on Si(100)
5. Dimer Pairing on the C-Alloyed Si(001) Surface
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1. Sn-induced c(4×4) reconstruction on the C-incorporated Si(001)-4∘ off surface;Surface Science;2023-04
2. Dewetting dynamics of silicon-on-insulator thin films;Physical Review B;2011-12-20
3. Achieving atomically flat surfaces for LiGaO2 substrates for epitaxial growth of GaN films;Materials Science and Engineering: B;2010-06
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