Achieving atomically flat surfaces for LiGaO2 substrates for epitaxial growth of GaN films
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. III–nitrides: Growth, characterization, and properties
2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
4. Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes
5. Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes
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