STM study of the C-inducedSi(100)−c(4×4)reconstruction
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.115321/fulltext
Reference49 articles.
1. A LEED STUDY OF THE HOMOEPITAXIAL GROWTH OF THICK SILICON FILMS
2. Si epitaxy by molecular beam method
3. Scanning tunnelling microscopy study of Si(100)-c(4 × 4) structure formation by annealing of Si epitaxial films
4. Surface morphology and reconstructions of ultra thin Si films grown by solid-phase epitaxy
5. Is the c(4×4) reconstruction of Si(001) associated with the presence of carbon?
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