Si epitaxy by molecular beam method-Reference-Cited by-同舟云学术

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Si epitaxy by molecular beam method

Published:1979-07 Issue: Volume:86 Page:102-107
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Sakamoto Tsunenori,Takahashi Tetsuo,Suzuki Eiichi,Shoji Akira,Kawanami Hitoshi,Komiya Yoshio,Tarui Yasuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference10 articles.

1. Molecular beam epitaxy

2. Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping Control

3. Acceptor dopants in silicon molecular‐beam epitaxy

4. Silicon homoepitaxial thin films via silane pyrolysis: A HEED and Auger electron spectroscopy study

5. Surface Debye temperature of the Si (001)-2 × 2 structure

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