A LEED STUDY OF THE HOMOEPITAXIAL GROWTH OF THICK SILICON FILMS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1755039
Reference4 articles.
1. EPITAXIAL GROWTH OF Si ON Si IN ULTRA HIGH VACUUM
2. STUDY OF THE EARLY STAGES OF THE EPITAXY OF SILICON ON SILICON
3. Low‐Energy Electron Diffraction Study of Silicon Surface Structures
4. Pyrometric Measurements of Si, Ge, and GaAs Wafers Between 100° and 700°C
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