Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric-Reference-Cited by-同舟云学术

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Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric

Published:2024-06 Issue:12 Volume:69 Page:1848-1851
ISSN:2095-9273
Container-title:Science Bulletin
language:en
Short-container-title:Science Bulletin

Author:

Liu Zi-Chun,Li Jia-Cheng,Yang Hui-Xia,Yang Han,Huang Yuan,Zhang Yi-Yun,Lai Pui-To,Ma Yuan-Xiao,Wang Ye-Liang

Funder

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

National Key Research and Development Program of China

Publisher

Elsevier BV

Reference10 articles.

1. A review of Ga2O3 materials, processing, and devices;Pearton;Appl Phys Rev,2018

2. Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS;Pearton;J Appl Phys,2018

3. High detectivity of metal-semiconductor-metal Ga2O3 solar-blind photodetector through thickness-regulated gain;Zheng;IEEE Trans Electron Devices,2022

4. Source-field-plated β-Ga2O3 MOSFET with record power figure of merit of 50.4 MW/cm2;Lv;IEEE Electron Device Lett,2019

5. A trapping tolerant drain current based temperature measurement of β-Ga2O3 MOSFETs;Zheng;Appl Phys Lett,2022

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Upheaval of Negative Dielectric Permittivity and Semiconductor to Metallic Transition in a Thermally Induced Sn-Doped β-Ga₂O₃ (−201) Single Crystal;ACS Applied Materials & Interfaces;2024-08-31

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