High Detectivity of Metal–Semiconductor–Metal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain
Author:
Affiliation:
1. Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun, China
2. Dalian University of Technology, Liaoning, Dalian, China
Funder
National Natural Science Foundation of China
100 Talents Program of the Chinese Academy of Sciences;
Fund from Jilin Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9839401/09805698.pdf?arnumber=9805698
Reference27 articles.
1. Highly selective ozone-treated β-Ga2O3 solar-blind deep-UV photodetectors
2. High-Performance β-Ga2O3 Solar-Blind Photodetector With Extremely Low Working Voltage
3. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
4. Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging
5. Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
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3. Effect of annealing temperature on solar-blind photodetectors based on 60-nm-thick Ga2O3 films;Applied Physics A;2024-01-09
4. 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2;Journal of Semiconductors;2023-07-01
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