Affiliation:
1. School of Microelectronics, University of Science and Technology of China 1 , Hefei 230026, China
2. National Synchrotron Radiation Laboratory, University of Science and Technology of China 2 , Hefei 230026, China
Abstract
Soft x-ray detectors play crucial roles in biology, chemistry, and lithography. Current soft x-ray detectors suffer from insufficient responsivity (R), excessively large cell area, and limited stability. Here, the β-Ga2O3 soft x-ray detector is constructed, and the effects of varying the sensitive layer thickness and voltage on the soft x-ray detection characteristics of the device are explored. Meanwhile, the mechanism of the multiplication ionization process from soft x-ray and the photoconductivity gain on the photoresponse performance of the device are analyzed. The device obtains the R up to 3.05 × 103 A/W under 300 eV soft x-ray irradiation at the synchrotron beamline, which is about 1.19 × 104 times higher than that of the conventional device. The Ga2O3 device also maintains stable operation under long-term irradiation and multicycle switching. These results indicate that Ga2O3 is an ideal candidate material for soft x-ray detection, which has great potential for applications such as imaging of biological cells.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
University of Science and Technology of China
fundamemtal research funds for the central universities
China Postdoctoral Science Foundation
Cited by
2 articles.
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