A trapping tolerant drain current based temperature measurement of β-Ga2O3 MOSFETs-Reference-Cited by-同舟云学术

A trapping tolerant drain current based temperature measurement of β-Ga₂O₃ MOSFETs

Published:2022-02-14 Issue:7 Volume:120 Page:073502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zheng Xiang¹^ORCID,Moule Taylor¹,Pomeroy James W.¹^ORCID,Higashiwaki Masataka²^ORCID,Kuball Martin¹^ORCID

Affiliation:

1. Centre for Device Thermography and Reliability, H.H. Wills Physics Laboratory, University of Bristol, Woodland Road, Bristol BS8 1UB, United Kingdom

2. National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0069655

Reference24 articles.

1. $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

2. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

3. Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

4. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

5. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

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