Time-resolved cavity ring-down spectroscopic study of the gas phase and surface loss rates of Si and SiH3 plasma radicals
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference17 articles.
1. Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma
2. Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si:H and a-C:H from H2, SiH4, and CH4 discharges
3. Reaction rate constant of Si atoms with SiH4molecules in a RF silane plasma
4. Mass spectrometry detection of radicals in SiH4-CH4-H2glow discharge plasmas
5. A modified molecular beam instrument for the imaging of radicals interacting with surfaces during plasma processing
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1. Monte Carlo Simulation of Chemical Reactions in Plasma Enhanced Chemical Vapor Deposition: from Microscopic View to Macroscopic Results;Silicon;2018-06-22
2. Silicon nanoparticle formation depending on the discharge conditions of an atmospheric radio-frequency driven microplasma with argon/silane/hydrogen gases;Journal of Physics D: Applied Physics;2015-07-22
3. Improved size distribution control of silicon nanocrystals in a spatially confined remote plasma;Plasma Sources Science and Technology;2015-01-08
4. Nucleation of silicon nanocrystals in a remote plasma without subsequent coagulation;Journal of Applied Physics;2014-06-28
5. On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers;Thin Solid Films;2014-05
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