Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372342
Reference25 articles.
1. Surface Reactions in Discharge and Cvd Deposition of Silane
2. Sticking and recombination of the SiH3 radical on hydrogenated amorphous silicon: The catalytic effect of diborane
3. Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon
4. Surface reactions during the a-Si : H growth in the diode and triode glow-discharge reactors
5. Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si:H and a-C:H from H2, SiH4, and CH4 discharges
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