Zinc-blende aluminum nitride formation using low-energy ion beam assisted deposition
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference9 articles.
1. Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma‐assisted, gas‐source molecular beam epitaxy
2. GaN, AlN, and InN: A review
3. Deposition factors and band gap of zinc-blende AlN
4. Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN
5. Properties of aluminum nitride films by an ion beam and vapor deposition method
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3. Microstructure and Optical Properties of c-AlN/TiN/Si(100) Heterostructure;ACTA OPT SIN;2019
4. Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD);Journal of the Korean Crystal Growth and Crystal Technology;2015-08-31
5. Fabrication and characterization of aluminum nitride pedestal-type optical waveguide;Canadian Journal of Physics;2014-07
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