Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN-Reference-Cited by-同舟云学术

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Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

Published:1998-06 Issue: Volume:189-190 Page:390-394
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Okumura H,Hamaguchi H,Koizumi T,Balakrishnan K,Ishida Y,Arita M,Chichibu S,Nakanishi H,Nagatomo T,Yoshida S

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Growth and characterization of cubic GaN

2. Metalorganic vapor-phase epitaxy of cubic AlxGa1−xN alloy on a GaAs (100) substrate

3. Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy

4. Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen source

5. Bandgap energy of cubic GaN

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1. AlN Buffer Enhances the Layer Quality of MBE-Grown Cubic GaN on 3C-SiC;Crystal Growth & Design;2022-10-06

2. Influence of Al _x Ga_1−xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001);Journal of Physics D: Applied Physics;2022-02-02

3. The calculation for quantized valence subband structure of zinc-blende GaN heterojunction quantum well based on k·p method;Semiconductor Science and Technology;2021-11-03

4. Epitaxial growth and magnetic properties of Fe 4− x Mn x N thin films grown on MgO(0 0 1) substrates by molecular beam epitaxy;Journal of Crystal Growth;2018-05

5. k ⋅ p calculations of bismuth induced changes in band structure of InN1−xBix, GaN1−xBix and AlN1−xBix alloys;Modern Physics Letters B;2018-04-18

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