k ⋅ p calculations of bismuth induced changes in band structure of InN1−xBix, GaN1−xBix and AlN1−xBix alloys

Abstract

Valence band anticrossing (VBAC) model is used to investigate band structure of InN[Formula: see text]Bi[Formula: see text], GaN[Formula: see text]Bi[Formula: see text] and AlN[Formula: see text]Bi[Formula: see text] for the purpose of optimal performance group-III nitride related devices. Obvious reduction in band gap and increase in spin–orbit splitting energy are founded by doping dilute concentration of bismuth in all these III-N material. The band gap of GaN[Formula: see text]Bi[Formula: see text] and AlN[Formula: see text]Bi[Formula: see text] show a step change, and this can be explained by the special position relation between of Bi impurity energy level with corresponding host’s band offsets. We also show how bismuth may be used to form alloys by finding the doping region [Formula: see text] which can provide a means of suppressing non-radiative CHSH (hot-hole producing) Auger recombination and inter-valence band absorption. For InN[Formula: see text]Bi[Formula: see text], bismuth concentration beyond 1.25% is found to be corresponding to the range of [Formula: see text] and it shows a continuous adjustable band gap from 0.7 eV to zero. This may make InN[Formula: see text]Bi[Formula: see text] a potential candidate for near or mid-infrared optoelectronic applications.