Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Published:2013-09-01 Issue:9 Volume:6 Page:092103
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Kinoshita Toru,Obata Toshiyuki,Nagashima Toru,Yanagi Hiroyuki,Moody Baxter,Mita Seiji,Inoue Shin-ichiro,Kumagai Yoshinao,Koukitu Akinori,Sitar Zlatko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=9/a=092103/pdf

Reference21 articles.

1. 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes

2. Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

3. Performance and reliability of ultraviolet-C pseudomorphic light emitting diodes on bulk AlN substrates

4. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

5. Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates

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1. Estimation of Junction Temperature in Single 228 nm‐Band AlGaN Far‐Ultraviolet‐C Light‐Emitting Diode on c‐Sapphire Having 1.8 mW Power and 0.32% External Quantum Efficiency;physica status solidi (a);2024-05-23

2. Computational Screening of Promising Deep-Ultraviolet Light Emitters;Journal of the American Chemical Society;2024-04-26

3. Chemical trend of radiative recombination in III-nitrides;Physical Review Materials;2024-04-10

4. Evolution of Dislocations and Strains in AlN Grown by High-Temperature Metal–Organic Chemical Vapor Deposition;Crystal Growth & Design;2024-02-06

5. Progress in efficient doping of Al-rich AlGaN;Journal of Semiconductors;2024-02-01

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