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Bandgap energy of cubic GaN

Published:1997-02 Issue:2 Volume:41 Page:201-204
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Okumura H.,Ohta K.,Ando K.,Rühle W.W.,Nagatomo T.,Yoshida S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine

2. Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy

3. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

4. Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen source

5. Optical properties near the band gap on hexagonal and cubic GaN

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1. Enhanced adsorption properties of ZnO/GaN heterojunction for CO and H2S under external electric field;Computational and Theoretical Chemistry;2021-12

2. Thermal properties of cubic GaN/GaAs heterostructures grown by molecular beam epitaxy;Journal of Applied Physics;2020-10-07

3. Band gaps of wurtzite ScxGa1−xN alloys;Applied Physics Letters;2015-03-30

4. Effect of Ti3SiC2 formation on p-type GaN by vacuum annealing on the contact properties;IOP Conference Series: Materials Science and Engineering;2014-08-01

5. Kohn-Sham band gaps and potentials of solids from the optimised effective potential method within the random phase approximation;The Journal of Chemical Physics;2014-02-07

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