Thermal properties of cubic GaN/GaAs heterostructures grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Thermal properties of cubic GaN/GaAs heterostructures grown by molecular beam epitaxy

Published:2020-10-07 Issue:13 Volume:128 Page:135301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Macias Marcos¹^ORCID,Casallas-Moreno Yenny Lucero²^ORCID,Camacho-Reynoso Marlene³,Zambrano-Serrano Mario Alberto³,Pérez-Hernández Briseida Guadalupe³,Yee-Rendón C. M.⁴^ORCID,Gurevich Yuri G.¹^ORCID,López-López Máximo¹^ORCID,Cruz-Orea Alfredo¹^ORCID

Affiliation:

1. Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional-IPN, Av. IPN No. 2508, Col. San Pedro Zacatenco, 07360 Ciudad de México, Mexico

2. CONACYT, Instituto Politécnico Nacional—UPIITA, Av. IPN 2580 Col. Barrio la Laguna Ticomán, Ciudad de México C.P. 07340, Mexico

3. Programa de Nanociencias y Nanotecnología, Centro de Investigación y de Estudios Avanzados del Instituto Polit’ecnico Nacional-IPN, Av. IPN No. 2508, Col. San Pedro Zacatenco, 07360 Ciudad de México, Mexico

4. Facultad de Ciencias Físico-Matemáticas, Universidad Autónoma de Sinaloa, Av. de las Américas y Blvd. Universitarios, Culiacán, Sinaloa 80000, Mexico

Funder

Consejo Nacional de Ciencia y Tecnología

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0016496

Reference32 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

3. GaN based heterostructure for high power devices

4. Bandgap energy of cubic GaN

5. As4 overpressure effects on the phase purity of cubic GaN layers grown on GaAs substrates by RF-MBE

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