Strain Engineering to Release Trapped Hole Carriers in p-Type Haeckelite GaN-Reference-Cited by-同舟云学术

Strain Engineering to Release Trapped Hole Carriers in p-Type Haeckelite GaN

Published:2021-11-19 Issue:12 Volume:3 Page:5257-5264
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Bae Soungmin¹^ORCID,Kang Yoon-Gu²,Ichihashi Kodai¹,Khazaei Mohammad³^ORCID,Swamy Varghese⁴,Han Myung Joon²^ORCID,Chang Kee Joo²^ORCID,Shudo Ken-ichi¹,Raebiger Hannes¹^ORCID

Affiliation:

1. Department of Physics, Yokohama National University, Yokohama 240-8501, Japan

2. Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea

3. Department of Physics, University of Tehran, North Kargar Ave., Tehran 1417935840, Iran

4. Mechanical Engineering, School of Engineering, Monash University Malaysia, Bandar Sunway, Subang Jaya, Selangor 47500, Malaysia

Funder

National Research Foundation of Korea

Japan Society for the Promotion of Science

Monash University Malaysia

KAIST

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00765

Reference69 articles.

1. GaN: Processing, defects, and devices

2. Gallium nitride devices for power electronic applications

3. A review of gallium nitride power device and its applications in motor drive

4. Commercial GaN-Based Power Electronic Systems: A Review

5. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

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