Properties of aluminum nitride films by an ion beam and vapor deposition method
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. Epitaxially grown AlN and its optical band gap
2. Nonmetallic crystals with high thermal conductivity
3. rf‐sputtered aluminum nitride films on sapphire
4. Reactive molecular beam epitaxy of aluminium nitride
5. Epitaktisches Aufwachsen von AlN-Schichten auf SiC- und Si-Einkristallen in der Gasentladung
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2. Zinc-blende aluminum nitride formation using low-energy ion beam assisted deposition;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
3. Frequency dependent conductivity of aluminium nitride films prepared by ion beam-assisted deposition;Thin Solid Films;2003-06
4. Auger electron spectroscopy and ion scattering spectroscopy studies of altered layer formation in AlN thin film prepared by post-irradiation with N2+ ions;Surface and Interface Analysis;2002
5. Reaction in Al2O3 surface layers upon ion implantation;Journal of Materials Chemistry;2000
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