Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma‐assisted, gas‐source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109062
Reference10 articles.
1. Epitaxial growth of aluminum nitride
2. AlN/GaN superlattices grown by gas source molecular beam epitaxy
3. Reactive molecular beam epitaxy of aluminium nitride
4. Electronic structure and bonding at SiC/AlN and SiC/BP interfaces
5. Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β‐SiC
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