Growth of AlN/SiC/AlN quantum wells on Si(111) by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4728119
Reference18 articles.
1. Growth dynamics and characterization of SiC quantum dots synthesized by low-frequency inductively coupled plasma assisted rf magnetron sputtering
2. SiC nanowires: material and devices
3. MBE growth and properties of SiC multi-quantum well structures
4. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
5. Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy
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3. CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth;Crystals;2022-11-10
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