Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density
Author:
Funder
National Research Foundation
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference22 articles.
1. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
2. Characterization of electrically active deep level defects in 4H and 6H SiC
3. Tailoring the Ti∕4H–SiC Schottky barrier by ion irradiation
4. Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam
5. Electron devices;Schoen;IEEE Trans. Electron. Devices,1998
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spin exchange dynamics in 4H SiC monocrystals with different nitrogen donor concentrations;Journal of Applied Physics;2023-10-11
2. Electron irradiation degradation on Silicon Schottky diode interface;2023-01-11
3. Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors;Journal of Instrumentation;2022-11-01
4. Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS;Applied Physics Express;2022-09-09
5. DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC;Journal of Materials Science: Materials in Electronics;2022-06-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3