Electron irradiation degradation on Silicon Schottky diode interface

Abstract

Abstract Au/n-Si/Au-Sb Schottky diode was fabricated, and electron irradiation was applied to the diode at 25 gray and 50 gray doses. The effects of irradiation on the electrical characteristics of the 450 oC annealed diode were analyzed by means of current-voltage (I-V), capacitance-voltage (C-V), conductance-voltage (G-V) and capacitance-frequency (C-f) measurements before and after irradiation. With increasing irradiation, changes were observed in the ideality factor, barrier height, series resistance, dielectric constant and diffusion potential values depending on the dose used. The n value was found to be 1.231, 1.306, and 1.350 before irradiation, after 25-gray, and after 50-gray irradiation, respectively. The Φb before irradiation was 0.742 eV. Depending on 25 and 50 gray irradiations, it was calculated as 0.768 eV and 0.761 eV, respectively. In addition, there was a decrease in leakage current by irradiation. Depending on the increasing dose, while the capacitance and donor concentration of the diode decreased, there was an increase in the diffusion potential and Fermi energy level. It has been observed that the diode deviates from ideality due to defects in the diode interface depending on irradiation. It has been observed that electron irradiation causes changes in the electrical properties of the Au/n-Si/Au-Sb Schottky diode.