Tailoring the Ti∕4H–SiC Schottky barrier by ion irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1841476
Reference19 articles.
1. Nitrogen and aluminum implantation in high resistivity silicon carbide
2. Low-dose n-type nitrogen implants in 4H-SiC
3. Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers
4. Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation
5. Nitrogen deactivation by implantation-induced defects in 4H–SiC epitaxial layers
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Strain on Atomic-Scale Friction in Two-Dimensional Graphene/ZrS2 van der Waals Heterostructure;Tribology Letters;2023-09-26
2. Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes;Journal of Physics D: Applied Physics;2023-06-02
3. A first-principles study on the superlubricity of two-dimensional graphene/ZrS2 heterostructure;Tribology International;2022-10
4. Ni/Heavily-Doped 4H-SiC Schottky Contacts;Materials Science Forum;2022-05-31
5. Effects of deposition temperature on Mo/SiC Schottky contacts;AIP Advances;2022-02-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3