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Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

  • Published:2015-04 Issue: Volume:348 Page:233-239
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Pastuović Željko,Capan Ivana,Cohen David D.,Forneris Jacopo,Iwamoto Naoya,Ohshima Takeshi,Siegele Rainer,Hoshino Norihiro,Tsuchida Hidekazu

Funder

ANSTO Accelerator Science Project No. 0208

IAEA

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of the effects of continuous and intermittent electron irradiation on commercial 4H-SiC Schottky barrier diodes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-08

2. IBIC analysis of SiC detectors developed for fusion applications;Radiation Physics and Chemistry;2020-12

3. Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study;Journal of Applied Physics;2018-04-28

4. Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime;Journal of Physics: Condensed Matter;2017-11-02

5. Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-04
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