Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles
2. The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon
3. Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon
4. Implantation and transient boron diffusion: the role of the silicon self-interstitial
5. Extended defects in shallow implants
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1. Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation;Technical Physics;2015-09
2. Structural and optical properties of silicon layers with InSb and InAs nanocrystals formed by ion-beam synthesis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
3. Crystalline-silicon-based infra-red LEDs and routes to laser diodes;Thin Solid Films;2011-10
4. Nano-engineered silicon light emitting diodes and optically active waveguides;Optical Materials;2010-10
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