Structural and optical properties of silicon layers with InSb and InAs nanocrystals formed by ion-beam synthesis
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Molecular beam epitaxial growth and characterization of InSb on Si
2. Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
3. Comparison between multilayered InAs quantum dot lasers with different dot densities
4. Optical properties of InAs quantum dots in a Si matrix
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3. Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices;Semiconductors;2021-01
4. GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N2 into SiO2/Si and SiNx/Si wafers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-12
5. Gallium nitride nanocrystal formation in Si3N4 matrix by ion synthesis;Bulletin of Materials Science;2020-08-20
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