Optical properties of InAs quantum dots in a Si matrix-Reference-Cited by-同舟云学术

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Optical properties of InAs quantum dots in a Si matrix

Published:2000-05 Issue:3-4 Volume:7 Page:317-321
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Heitz R,Ledentsov N.N,Bimberg D,Egorov A.Yu,Maximov M.V,Ustinov V.M,Zhukov A.E,Alferov Zh.I,Cirlin G.E,Soshnikov I.P,Zakharov N.D,Werner P,Gösele U

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

2. The optical properties of luminescence centres in silicon

3. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

4. Quantum confinement in nanometer-sized silicon crystallites

5. Linear scaling calculation for optical-absorption spectra of large hydrogenated silicon nanocrystallites

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions;Acta Physica Polonica A;2014-06

2. Ion-beam synthesis and characterization of narrow-gap A3B5 nanocrystals in Si: Effect of implantation and annealing regimes;Materials Science and Engineering: B;2013-11

3. Structural and optical properties of silicon layers with InSb and InAs nanocrystals formed by ion-beam synthesis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07

4. Ion-Beam Synthesis of InSb Nanocrystals in Si Matrix;Advanced Materials Research;2013-04

5. Effect of capping layer of GaAlAs on the electronic and optical properties of GaAs spherical layer quantum dot;Physica E: Low-dimensional Systems and Nanostructures;2013-01

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