Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions-Reference-Cited by-同舟云学术

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Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions

Published:2014-06 Issue:6 Volume:125 Page:1288-1292
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Komarov F.¹,Vlasukova L.¹,Milchanin O.¹,Greben M.¹,Parkhomenko I.¹,Mudryi A.²,Wendler E.³,Zukowski P.⁴

Affiliation:

1. Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

2. Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus P. Brovki Str. 17, 220072 Minsk, Belarus

3. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany

4. Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis;Materials Letters;2024-10

2. Ion-beam synthesis of InSb nanocrystals at the Si/SiO2 interface;Materials Letters;2022-01

3. Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices;Semiconductors;2021-01

4. Laser restructuring and photoluminescence of glass-clad GaSb/Si-core optical fibres;Nature Communications;2019-04-17

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