Ion-beam synthesis of InSb nanocrystals at the Si/SiO2 interface-Reference-Cited by-同舟云学术

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Ion-beam synthesis of InSb nanocrystals at the Si/SiO2 interface

Published:2022-01 Issue: Volume:306 Page:131027
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Tyschenko Ida,Zhang Ruonan,Volodin Vladimir,Popov Vladimir

Funder

Ministry of Education and Science of the Russian Federation

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors;Ko;Nature,2010

2. S. Prucnal, Sh. Zhou, X. Ou, S. Facsko, M.O. Liedke, F. Bregolin, B. Liedke, J. Grebing, M. Fritzsche, R. Hubner, A. Mucklich, L. Rebohle, M. Helm, M. Turek, A. Drozdziel, W. Skorupa, III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics, J. Appl. Phys. 115 (2014) 074306 (8 pp). https://doi.org/10.1063/1.4865875.

3. X.W. Zhang, J.B. Xia, Rashba spin-orbit coupling in InSb nanowires under transverse electric field, Phys. Rev. B. 74 (2006) 075304 (8pp). https://doi.org/10.1103/PhysRevB.74.075304.

4. D. Li, H. Li, H. Sun, L. Zhao, Characterization of ultrathin InSb nanocrystals film deposited on SiO2/Si substrate, Nanoscale Res. Lett. 6 (2011) 601 (4 pp). https://nanoscalereslett.springeropen.com/articles/10.1186/1556-276X-6-601.

5. C. Hilsum, A.C. Rose-Innes, Semiconducting III-V compounds, H.R. Henisch ed., Oxford-London-New-York-Paris, Pergamon Press, 1961.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis;Materials Letters;2024-10

2. Visible Photoluminescence of SiO$${}_{\mathbf{2}}$$ Films Implanted with In$${}^{\mathbf{+}}$$ and As$${}^{\mathbf{+}}$$ Ions;Optoelectronics, Instrumentation and Data Processing;2024-02

3. Raman scattering and photoluminescence in In+ and As+ ion-implanted SiO2 layers encapsulated with Si3N4;Physica B: Condensed Matter;2023-10

4. Enhanced InAs phase formation in the In- and As-implanted SiO2 films covered with Si3N4 layers;Materials Letters;2023-05

5. Radiative recombination in zinc blende ZnSe nanocrystals ion-beam synthesized in silica;Journal of Physics D: Applied Physics;2022-02-17

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