Comparison between multilayered InAs quantum dot lasers with different dot densities
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2213520
Reference11 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
3. InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm2/Layer)
4. Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-µm P-Doped Quantum-Dot Lasers without Current Adjustments
5. Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
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1. InAs/GaAsSb in-plane ultrahigh-density quantum dot lasers;Applied Physics Express;2021-11-22
2. Stacking of InAs QDs with Different Spacer Layer Thickness on GaAs Substrate by Molecular Beam Epitaxy;Advanced Science Letters;2018-08-01
3. Quantum entanglement concentration for photonic polarization state assisted by electron spin;Acta Physica Sinica;2017
4. Structural and optical properties of silicon layers with InSb and InAs nanocrystals formed by ion-beam synthesis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
5. Growth of InAs/Sb:GaAs quantum dots by the antimony surfactant mediated metal organic chemical vapor deposition for laser fabrication in the 1.3 μm band;SPIE Proceedings;2010-02-11
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