Epitaxial recrystallization of amorphous Si layers by swift heavy ions
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Surface Modification and Alloyings by Laser, Ion and Electron Beams;Williams,1983
2. Activation energies for light ions in ion beam induced epitaxial crystallization
3. Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition
4. Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon
5. Mechanism of low-temperature (≤300 °C) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation
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1. A study on the gamma and swift heavy ion irradiation-induced effects on the electrical properties of TaO -based MOS capacitors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-09
2. Athermal annealing of pre-existing defects in crystalline silicon;Acta Materialia;2023-12
3. Swift heavy ion beam stimulated epitaxial recrystallization of Si/SiO2 heterostructure;Materials Letters;2022-02
4. In-situ study of electrical transport in Pd/n-Si under high energy ion irradiation;Semiconductor Science and Technology;2020-06-25
5. Ionization-induced annealing in silicon upon dual-beam irradiation;Journal of Materials Science;2020-02-07
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