Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.55.1482/fulltext
Reference15 articles.
1. Disorder produced by high‐dose implantation in Si
2. Laser-Induced Solid Phase Crystallization in Amorphous Silicon Films
3. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
4. Interface structures during solid‐phase‐epitaxial growth in ion implanted semiconductors and a crystallization model
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