Interface structures during solid‐phase‐epitaxial growth in ion implanted semiconductors and a crystallization model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330457
Reference17 articles.
1. Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals
2. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
3. Incorporation of implanted In and Sb in silicon during amorphous layer regrowth
4. Substitutional solid solubility limits during solid phase epitaxy of ion implanted (100) silicon
5. Formation of metastable supersaturated solid solutions in ion implanted silicon during solid phase crystallization
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