Formation of Hexagonal Phase 9R-Si in SiO$${}_{\mathbf{2}}$$/Si System upon Kr$${}^{\mathbf{+}}$$ Ion Implantation-Reference-Cited by-同舟云学术

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Formation of Hexagonal Phase 9R-Si in SiO$${}_{\mathbf{2}}$$/Si System upon Kr$${}^{\mathbf{+}}$$ Ion Implantation

Published:2023-06 Issue:3 Volume:78 Page:361-367
ISSN:0027-1349
Container-title:Moscow University Physics Bulletin
language:en
Short-container-title:Moscow Univ. Phys.

Author:

Nikolskaya A. A.,Korolev D. S.,Mikhaylov A. N.,Konakov A. A.,Okhapkin A. I.,Kraev S. A.,Andrianov A. I.,Moiseev A. D.,Sushkov A. A.,Pavlov D. A.,Tetelbaum D. I.

Publisher

Allerton Press

Subject

General Physics and Astronomy

Link

https://link.springer.com/content/pdf/10.3103/S0027134923030153.pdf

Reference21 articles.

1. L. Fan, D. Yang, and D. Li, Materials 14 (14), 3964 (2021). https://doi.org/10.3390/ma14143964

2. X. Liu and D. Wang, Nano Res. 2 (7), 575 (2009). https://doi.org/10.1007/s12274-009-9058-z

3. C. Raffy, J. Furthmьller, and F. Bechstedt, Phys. Rev. B 66 (7), 075201 (2002). https://doi.org/10.1103/PhysRevB.66.075201

4. F. Fabbri, R. Rotunno, L. Lazzarini, et al., Sci. Rep. 4 (3603), 1 (2014). https://doi.org/10.1038/srep0360

5. Y. Lee, Y. Woo, D. Lee, and I. Kim, Sol. Energy 208, 957 (2020). https://doi.org/10.1016/j.solener.2020.08.063

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1. Thermally stable photoluminescence centers at 1240 nm in silicon obtained by irradiation of the SiO2/Si system;Journal of Applied Physics;2024-06-04

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