Author:
Kinomura A,Chayahara A,Tsubouchi N,Horino Y,Williams J.S
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
9 articles.
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1. Annealing of preexisting defects in silicon single crystals by ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-07
2. Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si;Applied Physics Letters;2014-12
3. Epitaxial recrystallization of amorphous Si layers by swift heavy ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04
4. Swift heavy ion beam induced recrystallization of amorphous Si layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-10
5. Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation;Journal of Applied Physics;2004-02