Dose rate dependence and time constant of the ion‐beam‐induced crystallization mechanism in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339027
Reference24 articles.
1. Measurement of damage distributions in ion bombarded Si, GaP and GaAs at 50 K
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3. Flux and fluence dependence of disorder produced during implantation of11B in silicon
4. Disorder produced by high‐dose implantation in Si
5. Radiation enhanced annealing of radiation damage in Ge
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