Flux and fluence dependence of disorder produced during implantation of11B in silicon-Reference-Cited by-同舟云学术

Flux and fluence dependence of disorder produced during implantation of11B in silicon

Published:1971-01 Issue:1-2 Volume:7 Page:143-148
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Eisen F. H.,Welch B.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577108232575

Reference14 articles.

1. POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON

2. LATTICE DISORDER PRODUCED IN Si BY 40‐keV BORON AND ITS EFFECT ON ELECTRICAL BEHAVIOR

3. Eisen, F. H., Welch, B., Westmoreland, J. E. and Mayer, J. W. 1970.Atomic Collision Phenomena in Solids, 111Amsterdam: North-Holland Publishing Co.

4. Eisen, F. H., Welch, B., Westmoreland, J. E. and Mayer, J. W. 1969. Proceedings Atomic Collision Phenomena Conference. 1969, Sussex. (to be published)

5. Channeling of medium-mass ions through silicon

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