Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements-Reference-Cited by-同舟云学术

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Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements

Published:2006-01 Issue:1-2 Volume:242 Page:667-669
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Otto G.,Hobler G.,Palmetshofer L.,Mayerhofer K.,Piplits K.,Hutter H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Flux and fluence dependence of disorder produced during implantation of11B in silicon

2. Atomic Collision Phemonena in Solids;Eisen,1970

3. S. Prussin, P.F. Zhang, in: Ion Implantation Technology-96, IEEE, 1997, p. 555.

4. Influence of dose rate and temperature on ion-beam-induced defect evolution in Si investigated by channeling implantation at different doses

5. Dwell-time dependence of irradiation damage in silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and optical properties of silicon nitride film generated on Si substrate by low energy ion implantation;The European Physical Journal Applied Physics;2008-03-28

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