Dwell-time dependence of irradiation damage in silicon-Reference-Cited by-同舟云学术

Dwell-time dependence of irradiation damage in silicon

Published:2001-05 Issue:1-4 Volume:178 Page:165-169
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Bischoff L,Teichert J,Hausmann S

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. J.F. Ziegler (Ed.), Handbook of Ion Implantation Technology, Elsevier, Amsterdam, 1992, p. 69

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2. Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01

4. Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-05