Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation-Reference-Cited by-同舟云学术

Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation

Published:2001-05 Issue:1-4 Volume:178 Page:170-175
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Posselt M,Teichert J,Bischoff L,Hausmann S

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

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