Ion irradiation-induced disordering of semiconductors: defect structures and applications-Reference-Cited by-同舟云学术

Ion irradiation-induced disordering of semiconductors: defect structures and applications

Published:2005-02 Issue:4-7 Volume:85 Page:677-687
ISSN:1478-6435
Container-title:Philosophical Magazine
language:en
Short-container-title:Philosophical Magazine

Author:

Williams * J.S.¹²,Kucheyev 1 S.O.¹²,Tan H.H.¹²,Wong-Leung J.¹²,Jagadish C.¹²

Affiliation:

1. a Research School of Physical Sciences and Engineering , The Australian National University , Canberra Australian Capital Territory 0200, Australia

2. b Research School of Physical Sciences and Engineering , The Australian National University , Canberra Australian Capital Territory 0200, Australia E-mail:

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/14786430412331320008

Reference42 articles.

1. Materials modification with ion beams

2. Ion implantation of semiconductors

3. Flux and fluence dependence of disorder produced during implantation of11B in silicon

4. Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique

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