LATTICE DISORDER PRODUCED IN Si BY 40‐keV BORON AND ITS EFFECT ON ELECTRICAL BEHAVIOR
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652969
Reference6 articles.
1. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
2. TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONS
3. The Displacement of Atoms in Solids by Radiation
4. ON THE NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS
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