TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652655
Reference3 articles.
1. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
2. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
3. Observation of ion bombardment damage in silicon
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