Influence of nitrogen element on total-dose radiation response of high-k Hf-based dielectric films
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. International Technology Roadmap for Semiconductors, 2003 ed., 2003, p. 12. .
2. Power-constrained CMOS scaling limits
3. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics
4. Characteristics of LaAlO3 gate dielectrics on Si grown by metalorganic chemical vapor deposition
5. Effects of radiation and charge trapping on the reliability of high- κ gate dielectrics
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiO[sub x] and TiO[sub x]N[sub y] gate dielectric layer;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009
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