Characteristics of LaAlO3 gate dielectrics on Si grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Characteristics of LaAlO3 gate dielectrics on Si grown by metalorganic chemical vapor deposition

Published:2003-10-27 Issue:17 Volume:83 Page:3540-3542
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Ai-Dong,Shao Qi-Yue,Ling Hui-Qin,Cheng Jin-Bo,Wu Di,Liu Zhi-Guo,Ming Nai-Ben,Wang Cathy,Zhou Hong-Wei,Nguyen Bich-Yen

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1622794

Reference13 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Thermodynamic stability of binary oxides in contact with silicon

3. Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys

4. Thermal expansion of LaAlO3 and (La,Sr)(Al,Ta)O3, substrate materials for superconducting thin-film device applications

5. In-plane electro-optic anisotropy of (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 thin films grown on (100)-cut LaAlO3

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