Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics-Reference-Cited by-同舟云学术

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Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

Published:2003-09-22 Issue:12 Volume:83 Page:2432-2434
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Dunwei,Wang Qian,Javey Ali,Tu Ryan,Dai Hongjie,Kim Hyoungsub,McIntyre Paul C.,Krishnamohan Tejas,Saraswat Krishna C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1611644

Reference15 articles.

1. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates

2. Epitaxial core–shell and core–multishell nanowire heterostructures

3. INORGANIC SEMICONDUCTOR NANOWIRES

4. High Performance Silicon Nanowire Field Effect Transistors

5. Silicon Nanowires: Preparation, Device Fabrication, and Transport Properties

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