Buried silicon dioxide formation in a precursor nanocavity layer in Si

Author:

van Veen A.,Rivera A.,Schut H.,van Gog H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Annealing ambient on the evolution of He-induced voids in silicon;Applied Surface Science;2011-06

2. Precipitates and defects in silicon co-implanted with helium and oxygen;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-04

3. Structural and Optical Properties of 6H-SiC Helium and Oxygen Implanted at 700 K;Advanced Materials Research;2010-12

4. Structural and optical properties of 6H–SiC helium-implanted at 600K;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-07

5. The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-07

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