Author:
van Veen A.,Rivera A.,Schut H.,van Gog H.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
9 articles.
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1. Annealing ambient on the evolution of He-induced voids in silicon;Applied Surface Science;2011-06
2. Precipitates and defects in silicon co-implanted with helium and oxygen;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-04
3. Structural and Optical Properties of 6H-SiC Helium and Oxygen Implanted at 700 K;Advanced Materials Research;2010-12
4. Structural and optical properties of 6H–SiC helium-implanted at 600K;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-07
5. The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-07